The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
May. 12, 2005
Ludmila Bolyasnikova, St. Petersburg, RU;
Vladimir Demidenko, St. Petersburg, RU;
Elena Gorokhova, St. Petersburg, RU;
Olga Ovsyannikova, St. Petersburg, RU;
Olga Khristich, St. Petersburg, RU;
Herfried Wieczorek, Aachen, DE;
Cornelis Reinder Ronda, Aachen, DE;
Gunter Zeitler, Aachen, DE;
Ludmila Bolyasnikova, St. Petersburg, RU;
Vladimir Demidenko, St. Petersburg, RU;
Elena Gorokhova, St. Petersburg, RU;
Olga Ovsyannikova, St. Petersburg, RU;
Olga Khristich, St. Petersburg, RU;
Herfried Wieczorek, Aachen, DE;
Cornelis Reinder Ronda, Aachen, DE;
Gunter Zeitler, Aachen, DE;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
The present invention relates to a fluorescent ceramic having the general formula GdOS doped with M, whereby M represents at least one element selected form the group Ce, Pr, Eu, Tb, Yb, Dy, Sm and/or Ho, whereby said fluorescent ceramic comprises a single phase in its volume; to a method for manufacturing a fluorescent ceramic using single-axis hot pressing; a detector for detecting ionizing radiation and to a use of said detector for detecting ionizing radiation. The method for manufacture of a fluorescent ceramic material using a single-axis hot pressing, comprises the steps: a) selecting a pigment powder of GdOS doped with M, and M represents at least one element selected from the group of Eu, Tb, Yb, Dy, Sm, Ho, Ce and/or Pr, whereby the grain size of said powder used for hot-pressing is of 1 μm, and said hot-pressing is carried out at—a temperature of 1000° C. to 1400° C.; and/or—a pressure of 100 Mpa to 300 MPa; air annealing at a temperature of 700° C. to 1200° for a time period of 0.5 hours to 30 hours.