The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2011

Filed:

Jan. 02, 2008
Applicants:

Takashi Miyayama, Tokyo, JP;

Youichi Tobita, Tokyo, JP;

Hiroyuki Murai, Tokyo, JP;

Seiichiro Mori, Tokyo, JP;

Inventors:

Takashi Miyayama, Tokyo, JP;

Youichi Tobita, Tokyo, JP;

Hiroyuki Murai, Tokyo, JP;

Seiichiro Mori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A dual-gate transistor formed of two transistors connected in series between a first power terminal and a first node is used as a charging circuit for charging a gate node (first node) of a transistor intended to pull up an output terminal of a unit shift register. The dual-gate transistor is configured such that the connection node (second node) between the two transistors constituting the dual-gate transistor is pulled down to the L level by the capacitive coupling between the gate and second node in accordance with the change of the gate from the H level to the L level.


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