The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 10, 2008
Holger Moench, Vaals, NL;
Adriaan Valster, Waalre, NL;
Martin Grabherr, Ulm, DE;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
The present invention relates to a method of manufacturing the light emitting component of a VECSEL and the corresponding VECSEL. In the method a layer stack () is epitaxially grown on a semiconductor substrate (). The layer stack comprises an active region (), an upper distributed Bragg reflector () and a n- or p-doped current injection layer () arranged between the active region () and the semiconductor substrate (). A mechanical support () or submount is bonded to an upper side of the layer stack () and the semiconductor substrate () is subsequently removed. A metallization layer () is optionally deposited on the lower side of the layer stack () and an optically transparent substrate () is bonded to this lower side. The proposed method allows the manufacturing of such a component in a standard manner and results in a VECSEL with a homogenous current injection and high efficiency of heat dissipation.