The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Sep. 22, 2009
Andre Strittmatter, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Andre Strittmatter, Menlo Park, CA (US);
Christopher L. Chua, San Jose, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Abstract
A semiconductor light-emitting device has, in place of a traditional separate cladding layer and contact structure, a non-epitaxial contact and waveguide layer. The non-epitaxial contact and waveguide layer is formed of a conductive material and such that it has a recess therein and over the injection region. Air filling the region together with appropriate choice of material for the non-epitaxial contact and waveguide layer creates desired lateral waveguiding. Metallic silver in one choice for this material. The recess may also be filled with a low-loss material having a refractive index higher than that of the material forming the non-epitaxial contact and waveguide layer. Transparent conductive oxides (e.g., indium tin oxide (ITO), zinc oxide (ZnO), etc.), appropriate metal (e.g., gold), or a composite comprising a conductive oxide and a metal, provide low absorption in the UV and near-IR wavelengths of interest, and are thus good candidate materials for within the recess.