The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Dec. 08, 2008
Applicant:
Hideki Asano, Ashigarakami-gun, JP;
Inventor:
Hideki Asano, Ashigarakami-gun, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor light emitting device having a conductive semiconductor substrate on which at least the following layers are stacked in the order listed below: a first clad layer; an active layer which includes at least one highly strained quantum well layer having a compressive strain amount of not less than 1% with respect to the conductive semiconductor substrate; and a second clad layer, a strain buffer layer adjacently formed on the active layer and includes a layer having a compressive strain amount not greater than the strain amount of the active layer is further provided.