The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Nov. 27, 2007
Kazumasa Nishimura, Niigata-ken, JP;
Ryo Nakabayashi, Niigata-ken, JP;
Naoya Hasegawa, Niigata-ken, JP;
Masamichi Saito, Niigata-ken, JP;
Yosuke Ide, Niigata-ken, JP;
Masahiko Ishizone, Niigata-ken, JP;
Kazumasa Nishimura, Niigata-ken, JP;
Ryo Nakabayashi, Niigata-ken, JP;
Naoya Hasegawa, Niigata-ken, JP;
Masamichi Saito, Niigata-ken, JP;
Yosuke Ide, Niigata-ken, JP;
Masahiko Ishizone, Niigata-ken, JP;
TDK Corporation, Tokyo, JP;
Abstract
A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.