The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Sep. 17, 2007
David C. Dening, Stokesdale, NC (US);
Philippe Gorisse, Midi-Pyrennees, FR;
David C. Dening, Stokesdale, NC (US);
Philippe Gorisse, Midi-Pyrennees, FR;
RF Micro Devices, Inc., Greenboro, NC (US);
Abstract
The present invention is a high voltage semiconductor switch that is formed from a chain of series coupled cascode circuits. In one embodiment, the switch may be a single-throw configuration coupled between an output and a direct current (DC) reference. In an alternate embodiment, the switch may be a double-throw configuration such that the output is switched between either a first DC reference or a second DC reference, such as ground. Each cascode circuit may have clamp circuits to prevent over voltage during switching transitions. The series coupled cascode circuits may be formed using discrete components or on a silicon-on-insulator (SOI) wafer, which may have a Silicon Dioxide insulator layer or a Sapphire insulator layer.