The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 02, 2010
Akio Suzuki, Hamamatsu, JP;
Etsuo Iizuka, Hamamatsu, JP;
Akihiro Kageyama, Hamamatsu, JP;
Motohiro Suyama, Hamamatsu, JP;
Akio Suzuki, Hamamatsu, JP;
Etsuo Iizuka, Hamamatsu, JP;
Akihiro Kageyama, Hamamatsu, JP;
Motohiro Suyama, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
An electron multiplier that can easily obtain characteristics according to a purpose is provided. By bonding a marginal portionof an MCPand a marginal portionof an MCPto each other via a conductive spacer layer, a gapis formed between channel portions. Therefore, when the electron multiplier is used for a purpose that requires a particularly high gain, by adjusting the thickness of the spacer layer, the gain can be increased by increasing the gap. In addition, when the electron multiplier is used for a purpose that requires an increase in gain as well as time characteristics, by adjusting the thickness of the spacer layer, the size of the gapcan be adjusted so that desired characteristics are obtained. Consequently, by only adjusting the thickness of the spacer layer, characteristics according to the purpose can be easily obtained.