The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 17, 2009
Applicant:
Hirotoshi Tachibana, Kawasaki, JP;
Inventor:
Hirotoshi Tachibana, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A capacitor is formed over a semiconductor substrate. The capacitor includes a lower electrode, a capacitor dielectric film and an upper electrode in this order recited, and has an area S equal to or larger than 1000 μmand L/S equal to or larger than 0.4 μm, where S is an area of a capacitor region in which the lower and upper electrodes face each other across the dielectric film, and L is a total length of a circumference line of the capacitor region.
Tachibana, Hirotoshi. (2011). Semiconductor device having capacitor with upper electrode whose circumference is made long and its manufacture method (U.S. Patent No. 8022504). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8022504
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile