The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Feb. 28, 2007
Applicants:
Yoshinori Shishida, Gifu, JP;
Shinichi Chikaki, Tokyo, JP;
Ryotaro Yagi, Shizuoka, JP;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/40 (2006.01); H01L 23/52 (2006.01); B32B 7/02 (2006.01); B32B 9/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and recovering the interlayer dielectric film from deterioration with a prescribed gas is obtained. This semiconductor device comprises a first insulating film formed on a substrate and a first gas-liquid separation film, formed on at least a part of the surface of the first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.