The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jan. 31, 2007
Yukiya Miyachi, Tokyo, JP;
Wojciech P. Giziewicz, Cambridge, MA (US);
Jurgen Michel, Cambridge, MA (US);
Lionel C. Kimerling, Cambridge, MA (US);
Yukiya Miyachi, Tokyo, JP;
Wojciech P. Giziewicz, Cambridge, MA (US);
Jurgen Michel, Cambridge, MA (US);
Lionel C. Kimerling, Cambridge, MA (US);
FUJIFILM Corporation, Tokyo, JP;
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A lateral photodiode, with improved response speed, includes a semiconductor substrate having active regions, and a p-type region and an n-type region arranged parallel to the surface of the substrate. The active regions are an n-layer and a p-layer respectively, and stacked in the thickness direction of the substrate to form a p-n junction. In addition, a barrier layer, for preventing movement of carriers from the substrate toward the active region, is provided on the side of the active regions toward the substrate.