The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Feb. 21, 2008
Nozomu Akagi, Nukata-gun, JP;
Shigeki Takahashi, Okazaki, JP;
Takashi Nakano, Nukata-gun, JP;
Yasushi Higuchi, Okazaki, JP;
Tetsuo Fujii, Toyohashi, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Makoto Kuwahara, Nagoya, JP;
Nozomu Akagi, Nukata-gun, JP;
Shigeki Takahashi, Okazaki, JP;
Takashi Nakano, Nukata-gun, JP;
Yasushi Higuchi, Okazaki, JP;
Tetsuo Fujii, Toyohashi, JP;
Yoshiyuki Hattori, Aichi-gun, JP;
Makoto Kuwahara, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.