The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 29, 2005
Minh Van Ngo, Fremont, CA (US);
Wenmei LI, Sunnyvale, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Ning Cheng, San Jose, CA (US);
Angela Hui, Fremont, CA (US);
Cinti Xiaohua Chen, Fremont, CA (US);
Minh Van Ngo, Fremont, CA (US);
Wenmei Li, Sunnyvale, CA (US);
Jeffrey A. Shields, Sunnyvale, CA (US);
Ning Cheng, San Jose, CA (US);
Angela Hui, Fremont, CA (US);
Cinti Xiaohua Chen, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A memory device may include a substrate, a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may also include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer. The memory device may further include an interlayer dielectric formed over the control gate and the substrate, where the interlayer dielectric includes a material that is substantially opaque to ultraviolet radiation.