The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jul. 08, 2009
Applicant:
Kazunori Masuda, Yokohama, JP;
Inventor:
Kazunori Masuda, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
This semiconductor device comprises a semiconductor substrate, a gate insulating film formed thereon, and a gate electrode formed through the gate insulating film on the semiconductor substrate. The first silicon nitride film is formed on the upper surface of the gate electrode, and a protection insulating film is formed on the side thereof. The second silicon nitride film is formed on the side of the protection insulating film. The third silicon nitride film is formed on the upper surface of the protection insulating film, and the bottom thereof is formed on a higher position than the bottom of the first silicon nitride film.