The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Apr. 25, 2008
Applicant:
Wook Hyun Kwon, Kyung-Ki Do, KR;
Inventor:
Wook Hyun Kwon, Kyung-Ki Do, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming buried bit lines in a non-volatile memory device can include forming impurity regions in a substrate of a non-volatile memory device to provide immediately neighboring buried bit lines for the device and then forming a shallow trench isolation region in the substrate between the immediately neighboring buried bit lines to substantially equalize lengths of the immediately neighboring buried bit lines.
Quick Actions:
Kwon, Wook. (2011). Methods of forming shallow trench isolation structures with buried bit lines in non-volatile memories (U.S. Patent No. 8022462). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8022462
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