The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jul. 27, 2009
Tadashi Yamaguchi, Tokyo, JP;
Keiichiro Kashihara, Tokyo, JP;
Tomonori Okudaira, Tokyo, JP;
Toshiaki Tsutsumi, Tokyo, JP;
Tadashi Yamaguchi, Tokyo, JP;
Keiichiro Kashihara, Tokyo, JP;
Tomonori Okudaira, Tokyo, JP;
Toshiaki Tsutsumi, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A method of manufacturing a semiconductor device, including the steps of preparing a silicon substrate which has a main surface whose plane direction is a surface (); forming an n channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) which has a gate electrode, a source region, a drain region and a channel whose channel length direction is parallel to a crystal orientation <100> of the silicon substrate; and forming NiSi over the gate electrode and NiSiover the source region and the drain region at the same steps.