The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Aug. 16, 2007
Applicant:
Sang-man Bae, Kyoungki-do, KR;
Inventor:
Sang-Man Bae, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor, Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/112 (2006.01); H01L 29/12 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract
A substrate has an active region divided into storage node contact junction regions, channel regions and a bit line contact junction region. Device isolation layers are formed in the substrate isolating the active region from a neighboring active region Recess patterns are formed each in a trench structure and extending from a storage node contact junction region to a channel region Line type gate patterns, each filling a predetermined portion of the trench of the individual recess pattern, is formed in a direction crossing a major axis of the active region in an upper portion of the individual channel region.