The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Feb. 12, 2009
Xinyu Zheng, Monterey Park, CA (US);
Thomas J. Cunningham, Pasadena, CA (US);
Bedabrata Pain, Los Angeles, CA (US);
Xinyu Zheng, Monterey Park, CA (US);
Thomas J. Cunningham, Pasadena, CA (US);
Bedabrata Pain, Los Angeles, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.