The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Dec. 17, 2010
Tomokazu Katsuyama, Yokohama, JP;
Tomokazu Katsuyama, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
The process of the present invention to form a mask made of inorganic material containing silicon reduces the plasma damage induced in the semiconductor layers due to the plasma-ashing. The semiconductor material is heat-treated at a high temperature after the growth thereof to form an oxide layer positively in the surface of the semiconductor material before it is covered by the silicon inorganic film. This inorganic film is dry-etched by an etchant containing fluorine to get a mask for forming a mesa and for growing burying layer selectively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile