The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2011

Filed:

Dec. 18, 2008
Applicants:

Bogdan Govoreanu, Hulshout, BE;

Stefan DE Gendt, Wijnegem, BE;

Sven Van Elshocht, Heverlee, BE;

Tom Schram, Rixensart, BE;

Inventors:

Bogdan Govoreanu, Hulshout, BE;

Stefan De Gendt, Wijnegem, BE;

Sven Van Elshocht, Heverlee, BE;

Tom Schram, Rixensart, BE;

Assignee:

IMEC, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described. In the non-volatile memory device, the interpoly/blocking dielectric comprises a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored, the siliconoxide consuming material having consumed at least part of the upper layer.


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