The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Nov. 29, 2008
In-cheol Baek, Suwon-si, KR;
In-Cheol Baek, Suwon-si, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
A method for fabricating a semiconductor device is disclosed. The method includes: forming a photoresist film on a semiconductor substrate including a silicide forming region and non-silicide forming region; forming a photoresist pattern as a non-salicide pattern by patterning the photoresist film, so as to cover the non-silicide forming region and open the silicide forming region, with an overhang structure that a bottom is removed more compared to a top; forming a metal film on a top of the photoresist pattern and overall the semiconductor substrate in the silicide forming region; stripping the photoresist pattern and the metal film on the photoresist pattern; and forming a silicide metal film by annealing the metal film remaining on the semiconductor substrate. Therefore, the present invention simplifies a salicide process of a semiconductor device, making it possible to improve yields.