The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Apr. 05, 2005
Janet E Hails, Malvern, GB;
Jean Giess, Malvern, GB;
John W Cairns, Malvern, GB;
Andrew Graham, Malvern, GB;
Louise Buckle, Malvern, GB;
David J Hall, Malvern, GB;
Neil T Gordon, Malvern, GB;
Janet E Hails, Malvern, GB;
Jean Giess, Malvern, GB;
John W Cairns, Malvern, GB;
Andrew Graham, Malvern, GB;
Louise Buckle, Malvern, GB;
David J Hall, Malvern, GB;
Neil T Gordon, Malvern, GB;
Qinetiq Limited, London, GB;
Abstract
A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.