The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Jan. 29, 2009
Yi Tae Kim, Hwaseong-si, KR;
Kyung Ho Lee, Suwon-si, KR;
Sae-young Kim, Suwon-si, KR;
Yun Ho Jang, Seoul, KR;
Jung Chak Ahn, Yongin-si, KR;
Yi Tae Kim, Hwaseong-si, KR;
Kyung Ho Lee, Suwon-si, KR;
Sae-Young Kim, Suwon-si, KR;
Yun Ho Jang, Seoul, KR;
Jung Chak Ahn, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.