The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Jun. 17, 2010
Hiroshi Kano, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.