The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Feb. 02, 2006
Harumichi Mori, Hamamatsu, JP;
Kazuki Fujita, Hamamatsu, JP;
Ryuji Kyushima, Hamamatsu, JP;
Masahiko Honda, Hamamatsu, JP;
Seiichiro Mizuno, Hamamatsu, JP;
Harumichi Mori, Hamamatsu, JP;
Kazuki Fujita, Hamamatsu, JP;
Ryuji Kyushima, Hamamatsu, JP;
Masahiko Honda, Hamamatsu, JP;
Seiichiro Mizuno, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
There is provided a solid-state imaging device with an improved linearity as well as dynamic range. Each pixel portion Pin the solid-state imaging device includes: a buried photodiode PD for generating charges of an amount corresponding to the intensity of incident light; a capacitive element C connected in parallel to the buried photodiode PD to accumulate charges generated in the buried photodiode PD; an amplifying transistor Tfor outputting a voltage value corresponding to a voltage value input to the gate terminal; a transferring transistor Tfor inputting a voltage value corresponding to the amount of accumulated charges in the capacitive element C to the gate terminal of the amplifying transistor T; a discharging transistor Tfor discharging the charges of the capacitive element C; and a selecting transistor Tfor selectively outputting a voltage value output from the amplifying transistor Tto a wiring L.