The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Jun. 01, 2010
Graeme B. Boyd, Vancouver, CA;
Guillaume Fortin, Verdun, CA;
Graeme B. Boyd, Vancouver, CA;
Guillaume Fortin, Verdun, CA;
PMC-Sierra, Inc., Santa Clara, CA (US);
Abstract
Apparatus and methods efficiently provide compatibility between CMOS integrated circuits and voltage levels that are different from that typically used by modern integrated circuits. For example, backwards compatibility can be desirable. Older signaling interfaces operate at different voltage levels than modern CMOS integrated circuits and conventional circuits to interface with these other signaling interfaces exhibit relatively high power consumption. In the context of a transmitter with a P-type substrate, an output driver is embodied in a deep N-well with retrograde P-wells and is biased with voltage biases that can float with respect to the VDD and VSS supplies provided to the CMOS integrated circuit. In the context of a receiver with a P-type substrate, a portion of a receiver is embodied in a deep N-well and biased with floating voltage biases such that the receiver is compatible with signaling received from a signaling technology with disparate voltage levels.