The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Jan. 31, 2008
Harvey C. Nathanson, Pittsburgh, PA (US);
Robert M. Young, Ellicott City, MD (US);
Joseph T. Smith, Columbia, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Archer S. Mitchell, Silver Spring, MD (US);
Harvey C. Nathanson, Pittsburgh, PA (US);
Robert M. Young, Ellicott City, MD (US);
Joseph T. Smith, Columbia, MD (US);
Robert S. Howell, Silver Spring, MD (US);
Archer S. Mitchell, Silver Spring, MD (US);
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.