The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
May. 28, 2008
Masamichi Yanagida, Ota, JP;
Masamichi Yanagida, Ota, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
SANYO Semiconductor Co., Ltd., Gunma, JP;
Abstract
The invention realizes low on-resistance and high current flow in a semiconductor device in which a current flows in a thickness direction of a semiconductor substrate. A first MOS transistor having first gate electrodes and first source layers is formed on a front surface of a semiconductor substrate, and a second MOS transistor having second gate electrodes and second source layers is formed on a back surface thereof. A drain electrode connected to the semiconductor substrate, a first source electrode connected to the first source layers, a second source electrode connected to the second source layers, and a first penetration hole penetrating the semiconductor substrate are further formed. A first wiring connecting the first source electrode and the second source electrode is formed in the first penetration hole. The semiconductor substrate serves as a common drain region of the first and second MOS transistors.