The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Apr. 19, 2010
Dae-shik Kim, Suwon-si, KR;
Oh-kyum Kwon, Suwon-si, KR;
Myung-hee Kim, Suwon-si, KR;
Yong-chan Kim, Suwon-si, KR;
Hye-young Park, Seoul, KR;
Joon-suk OH, Seocho-gu, KR;
Dae-Shik Kim, Suwon-si, KR;
Oh-Kyum Kwon, Suwon-si, KR;
Myung-Hee Kim, Suwon-si, KR;
Yong-Chan Kim, Suwon-si, KR;
Hye-Young Park, Seoul, KR;
Joon-Suk Oh, Seocho-gu, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may be formed under a portion of the schottky junction.