The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2011

Filed:

Jul. 10, 2006
Applicants:

Jean-michel Reynes, Pompertuzat, FR;

Eric Marty, Toulouse, FR;

Alain Deram, Colomiers, FR;

Jean-baptiste Sauveplane, Toulouse, FR;

Inventors:

Jean-Michel Reynes, Pompertuzat, FR;

Eric Marty, Toulouse, FR;

Alain Deram, Colomiers, FR;

Jean-Baptiste Sauveplane, Toulouse, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/04 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device.


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