The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Apr. 22, 2009
Atsuo Nakagawa, Kyoto, JP;
Ichiroh Murakami, Kyoto, JP;
Masanori Murakami, Legal Representative, Shizuoka, JP;
Atsuo Nakagawa, Kyoto, JP;
Ichiroh Murakami, Kyoto, JP;
Masanori Murakami, legal representative, Shizuoka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of a semiconductor substrate, for generating charges by photoelectric conversion; a transfer region formed in the upper part of the semiconductor substrate and located on a side of the photoelectric conversion region, for transferring the charges; and a transfer electrode formed over the semiconductor substrate and located above the transfer region. The solid-state image sensor further includes: a first insulating film which covers the photoelectric conversion region and the transfer electrode; an antireflection film which covers the first insulating film; and a first light-shielding film which is formed on the antireflection film and covers at least the transfer electrode. The antireflection film and the first light-shielding film have an opening above the transfer electrode.