The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Apr. 06, 2009
Seiji Otake, Saitama, JP;
Seiji Otake, Saitama, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Sanyo Semiconductor Co., Ltd., Ora-gun, JP;
Abstract
A breakdown voltage of a clamp diode can be reduced while a leakage current is suppressed. A Ptype diffusion layer is formed in a surface of an Ntype semiconductor layer. An Ntype diffusion layer is formed in a surface of the Ptype diffusion layer. A Ptype diffusion layer is formed adjacent the Ntype diffusion layer in the surface of the Ptype diffusion layer. An Ntype diffusion layer is formed adjacent the Ptype diffusion layer in the surface of the Ntype semiconductor layer. There is formed a cathode electrode, which is electrically connected with the Ntype diffusion layer through a contact hole formed in an insulation film on the Ntype diffusion layer. There is formed a wiring (an anode electrode) connecting between the Ptype diffusion layer and the Ntype diffusion layer through a contact hole formed in the insulation film on the Ptype diffusion layer and a contact hole formed in the insulation film on the Ntype diffusion layer.