The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Apr. 09, 2009
Saichirou Kaneko, Kyoto, JP;
Saichirou Kaneko, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
An energy transmission device includes: a semiconductor device formed on a first semiconductor substrate; a semiconductor integrated circuit including a reverse current preventing diode and a control circuit; a DC voltage source; and a transformer. The reverse current preventing diode includes a reverse current preventing layer of a second conductivity type formed at a surface of a second semiconductor substrate, and a well layer of a first conductivity type formed in the second semiconductor substrate and covering the reverse current preventing layer. The transformer includes a primary winding connected in series with the semiconductor device and the DC voltage source, and a first secondary winding connected to a load. The energy transmission device is configured so that electric power is supplied from the first secondary winding of the transformer to the load. A second drain electrode of the semiconductor device is electrically connected to the reverse current preventing layer.