The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Aug. 04, 2010
Joerg Appenzeller, West Lafayette, IN (US);
Aj Kleinosowski, Seattle, WA (US);
Edward J. Nowak, Essex Junction, VT (US);
Richard Q. Williams, Essex Junction, VT (US);
Joerg Appenzeller, West Lafayette, IN (US);
AJ Kleinosowski, Seattle, WA (US);
Edward J. Nowak, Essex Junction, VT (US);
Richard Q. Williams, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Gate electrodes are formed on a semiconducting carbon nanotube, followed by deposition and patterning of a hole-inducing material layer and an electron inducing material layer on the carbon nanotube according to the pattern of a one dimensional circuit layout. Electrical isolation may be provided by cutting a portion of the carbon nanotube, forming a reverse biased junction of a hole-induced region and an electron-induced region of the carbon nanotube, or electrically biasing a region through a dielectric layer between two device regions of the carbon nanotube. The carbon nanotubes may be arranged such that hole-inducing material layer and electron-inducing material layer may be assigned to each carbon nanotube to form periodic structures such as a static random access memory (SRAM) array.