The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Nov. 29, 2007
Taku Suzuki, Tsukuba, JP;
Yasushi Yamauchi, Tsukuba, JP;
Taku Suzuki, Tsukuba, JP;
Yasushi Yamauchi, Tsukuba, JP;
Japan Science and Technology Agency, Saitama, JP;
Abstract
A spin polarized ion beam generation apparatus () can efficiently generate a spin polarized ion by using a pumping light generator () to an ion in a high frequency discharge tube () to irradiate optical pumping () by circularly polarized light and linearly polarized light orthogonal to each other to a metastable atom. For example, a polarized helium ion beam having a spin polarization rate that exceeds 18% and that is as high as 25% can be generated. The spin polarized ion beam generation apparatus () also can be applied to a processing apparatus and an analysis apparatus that can irradiate a polarized ion beam to a specimen. According to the spin polarized ion scattering spectroscopy apparatus, the spin status in a region at a depth of about 2 to 3 atomic layers from the surface of the specimen can be measured while discriminating the elements from the atomic layer with a reduced measurement time and with a high accuracy impossible in the conventional technique.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile