The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Sep. 04, 2007
Juergen Weber, Kleinostheim, DE;
Tatsuhiro Sato, Fukushima, JP;
Ralf Schneider, Bruchkoebel, DE;
Achim Hofmann, Frankfurt, DE;
Christian Gebauer, Tokyo, JP;
Juergen Weber, Kleinostheim, DE;
Tatsuhiro Sato, Fukushima, JP;
Ralf Schneider, Bruchkoebel, DE;
Achim Hofmann, Frankfurt, DE;
Christian Gebauer, Tokyo, JP;
Heraeus Quarzglas GmbH & Co. KG, Hanau, DE;
Shin-Etsu Quartz Products Co., Tokyo, JP;
Abstract
The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiOand dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.