The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Jul. 20, 2007
Applicants:
Ruben Lieten, Zonhoven, BE;
Stefan Degroote, Scherpenheuven-Zichem, BE;
Gustaaf Borghs, Leuven, BE;
Inventors:
Assignees:
IMEC, Leuven, BE;
Vrije Universiteit Brussel, Brussels, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates a method for forming a monocrystalline GeN layer () on a substrate () comprising at least a Ge surface (). The method comprises, while heating the substrate () to a temperature between 550° C. and 940° C., exposing the substrate () to a nitrogen gas flow. The present invention furthermore provides a structure comprising a monocrystalline GeN layer () on a substrate (). The monocrystalline GeN formed by the method according to embodiments of the invention allows passivation of surface states present at the Ge surface ().