The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
May. 07, 2010
Hiroshi Okumura, Tokyo, JP;
Hiroshi Okumura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a small heat capacity part and a large heat capacity part, and the small heat capacity part is used at least as a channel part. The polycrystalline Si film is formed of a crystal grain film through laser annealing of an energy density with which the small heat capacity part melts completely but the large heat capacity part does not melt completely. Since the channel part is formed of large crystal grains grown from the boundaries between the small heat capacity part and the large heat capacity parts, it is possible to realize performances such as a low threshold voltage value, high carrier mobility and a low leak current by using a typical laser annealing device.