The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Dec. 10, 2008
Doo Hee Cho, Daejeon, KR;
Shin Hyuk Yang, Gyeonggi-do, KR;
Chun Won Byun, Daejeon, KR;
Chi Sun Hwang, Daejeon, KR;
Hye Yong Chu, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Doo Hee Cho, Daejeon, KR;
Shin Hyuk Yang, Gyeonggi-do, KR;
Chun Won Byun, Daejeon, KR;
Chi Sun Hwang, Daejeon, KR;
Hye Yong Chu, Daejeon, KR;
Kyoung Ik Cho, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnO); and remaining molar percentage of an aluminum oxide (AlO). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.