The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2011

Filed:

Sep. 02, 2008
Applicant:

Chiu-te Lee, Hsinchu, TW;

Inventor:

Chiu-Te Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor fabricating process is provided. First, a substrate is provided. The substrate has thereon a stacked structure and a mask layer disposed on the stacked structure. Thereafter, an oxide layer is formed on a surface of the mask layer and a surface of at least a portion of the stacked structure. Afterwards, a first spacer is formed on a sidewall of the stacked structure. Then, a second spacer is formed on a sidewall of the first spacer. Further, a first etching process is performed to remove the oxide layer on the surface of the mask layer. Thereafter, a second etching process is performed to simultaneously remove the mask layer and the second spacer.


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