The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2011
Filed:
Feb. 05, 2007
Applicants:
Matthias Hierlemann, Fishkill, NY (US);
Ja-hum Ku, LaGrangeville, NY (US);
Inventors:
Matthias Hierlemann, Fishkill, NY (US);
Ja-Hum Ku, LaGrangeville, NY (US);
Assignees:
Infineon Technologies AG, Neubiberg, DE;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 5/00 (2006.01); H01L 21/337 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and apparatus for crystallizing a semiconductor that includes a first layer having a first crystal lattice orientation and a second layer having a second crystal lattice orientation, comprising amorphizing at least a portion of the second layer, applying a stress to the second layer and heating the second layer above a recrystallization temperature.