The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2011

Filed:

Aug. 20, 2010
Applicants:

Satoshi Makioka, Osaka, JP;

Masahiko Inamori, Osaka, JP;

Motoyoshi Iwata, Osaka, JP;

Inventors:

Satoshi Makioka, Osaka, JP;

Masahiko Inamori, Osaka, JP;

Motoyoshi Iwata, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

An RF power amplifier according to an implementation of the present invention includes: a first power amplifier which linearly amplifies a first RF signal of a first frequency band; a second power amplifier which linearly amplifies a second RF signal of a second frequency band lower than the first frequency band; a third power amplifier which nonlinearly amplifies a third RF signal of the first frequency band; a fourth power amplifier which nonlinearly amplifies a fourth RF signal of the second frequency band, and input lines of the respective power amplifiers do not cross each other on semiconductor substrates, and the output lines of the respective power amplifiers do not cross each other on the semiconductor substrates.


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