The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Mar. 21, 2008
Yoshimasa Amatatsu, Gunma, JP;
Minoru Akaishi, Gunma, JP;
Satoshi Onai, Gunma, JP;
Katsuya Okabe, Gunma, JP;
Yoshiaki Sano, Tochigi, JP;
Akira Yamane, Gunma, JP;
Yoshimasa Amatatsu, Gunma, JP;
Minoru Akaishi, Gunma, JP;
Satoshi Onai, Gunma, JP;
Katsuya Okabe, Gunma, JP;
Yoshiaki Sano, Tochigi, JP;
Akira Yamane, Gunma, JP;
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
In a semiconductor device according to the present invention, a plurality of opening regionstoare formed in an insulating film on a pad electrode. A metal layerformed on the pad electrodehas a plurality of concave portionstoformed therein by covering the opening regionsto. Moreover, in a peripheral portion at a bottom of each of the concave portionstoin the metal layer, the metal layerand a Cu plating layerreact with each other. By use of this structure, the metal reaction area serves as a current path on the pad electrode. Thus, a resistance value on the pad electrodeis reduced.