The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Dec. 11, 2009
Mizuki Ono, Yokohama, JP;
Mizuki Ono, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor component includes a mixed crystal layer of silicon and germanium having a first main surface, containing a III-group impurity, and having a first face orientation alone represented as a face (11N) by using N satisfying 1.2<N<10 or a face crystallographically equivalent to the face (11N) in the first main surface, a compressive strain being applied to the mixed crystal layer along an in-plane direction, a gate dielectric layer formed on the first main surface. The component further includes a gate electrode formed on the gate dielectric layer, and source/drain regions formed to sandwich the gate electrode in a direction [110] or a crystallographically equivalent direction of the mixed crystal layer and containing a V-group impurity.