The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jun. 27, 2007
Naoki Kotani, Hyogo, JP;
Naoki Kotani, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The distance between a substrate contact portion and an active region in a p-type MIS transistor is greater than the distance between a substrate contact portion and an active region in an n-type MIS transistor. Alternatively, the length of a protruding part of a gate electrode of the p-type MIS transistor that protrudes from the p-type MIS transistor's active region toward the p-type MIS transistor's substrate contact portion is shorter than the length of a protruding part of a gate electrode of the n-type MIS transistor that protrudes from the n-type MIS transistor's active region toward the n-type MIS transistor's substrate contact portion. Alternatively, a part of the p-type MIS transistor's substrate contact portion that is located opposite the p-type MIS transistor's gate electrode has a lower impurity concentration than the other part thereof. Alternatively, a protective film is formed only on the protruding part of the p-type MIS transistor's gate electrode that protrudes from the p-type MIS transistor's active region toward the p-type MIS transistor's substrate contact portion.