The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jun. 29, 2007
Akram Salman, Santa Clara, CA (US);
Stephen Beebe, Los Altos, CA (US);
Akram Salman, Santa Clara, CA (US);
Stephen Beebe, Los Altos, CA (US);
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method for fabricating a semiconductor device is provided. According to this method, a first gate electrode and a second gate electrode are formed overlying a first portion of a silicon substrate, and ions of a first conductivity-type are implanted into a second portion of the silicon substrate to define a first conductivity-type diode region within the silicon substrate. Ions of a second conductivity-type are implanted into a third portion of the silicon substrate to define a second conductivity-type diode region within the silicon substrate. During one of the steps of implanting ions of the first conductivity-type and implanting ions of the second conductivity-type, ions are also implanted into at least part of the first portion to define a separation region within the first portion. The separation region splits the first portion into a first well device region and a second well device region. The separation region is formed in series between the first well device region and the second well device region.