The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Dec. 26, 2007
Joseph A. Yedinak, Mountaintop, PA (US);
Nathan L. Kraft, Pottsville, PA (US);
Christopher B. Kocon, Mountaintop, PA (US);
Richard Stokes, Shavertown, PA (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Nathan L. Kraft, Pottsville, PA (US);
Christopher B. Kocon, Mountaintop, PA (US);
Richard Stokes, Shavertown, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A semiconductor power device includes active trenches that define an active area and an edge area that is located outside of the active area. The active trenches include a lower shield poly, an upper gate poly, a first oxide layer and a second oxide layer wherein the first oxide layer separates the lower shield poly from the upper gate poly and the second oxide layer covers the upper gate poly. The lower shield poly, upper gate poly, first oxide layer and second oxide layer conform to the shapo of the active trench and extend from the active trench to a surface of the edge area. The edge area includes a first opening that extends through the first oxide layer to the lower shield poly and a second opening that extends through the second oxide layer to the upper gate poly.