The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Sep. 17, 2008
Yasushi Nakasaki, Yokohama, JP;
Koichi Muraoka, Sagamihara, JP;
Naoki Yasuda, Yokohama, JP;
Shoko Kikuchi, Kawasaki, JP;
Yasushi Nakasaki, Yokohama, JP;
Koichi Muraoka, Sagamihara, JP;
Naoki Yasuda, Yokohama, JP;
Shoko Kikuchi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A MONOS type non-volatile semiconductor memory device which is capable of electrically writing, erasing, reading and retaining data, the memory device including source/drain regions, a first gate insulating layer, a first charge trapping layer formed on the first gate insulating layer, a second gate insulating layer formed on the first charge trapping layer, and a controlling electrode formed on the second gate insulating layer. The first charge trapping layer includes an insulating film containing Al and O as major elements and having a defect pair formed of a complex of an interstitial O atom and a tetravalent cationic atom substituting for an Al atom, the insulating film also having electron unoccupied levels within the range of 2 eV-6 eV as measured from the valence band maximum of AlO.