The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2011

Filed:

Jun. 14, 2007
Applicant:

Naohide Wakita, Osaka, JP;

Inventor:

Naohide Wakita, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/26 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor according to the present invention includes: a semiconductor layer (); a source electrode () and a drain electrode () that each are connected to the semiconductor layer (); an insulating layer () that is formed adjacent to the semiconductor layer (); and a gate electrode () that faces the semiconductor layer () across the insulating layer (). The semiconductor layer () includes an aggregate of semiconductor fine particles composed of a complex oxide. The complex oxide contains zinc and at least one selected from a group consisting of indium, gallium and rhodium.


Find Patent Forward Citations

Wakita, Naohide. (2011). Thin film transistor, method of manufacturing the same, and electronic device using the same (U.S. Patent No. 8013331). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8013331

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…