The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Mar. 06, 2008
Applicants:
Yoshiko Nakamura, Higashimurayama, JP;
Masato Ueda, Tsukuba, JP;
Inventors:
Yoshiko Nakamura, Higashimurayama, JP;
Masato Ueda, Tsukuba, JP;
Assignee:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An organic field effect transistor comprising a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, wherein the source electrodeand the drain electrodeare composed of conductive layersand', and compound layersand′ comprising an acceptor compound, respectively, wherein the compound layersand′ are each located in contact with the semiconductor layer, and wherein the semiconductor layercontains a polymer compound having an ionization potential of 5.0 eV or more.